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Morphological variations of Mn‐doped ZnO dilute magnetic semiconductors thin films grown by succesive ionic layer by adsorption reaction method
Author(s) -
Balamurali Subramanian,
Chandramohan Rathinam,
Karunakaran Marimuthu,
Mahalingam Thayan,
Parameswaran Padmanaban,
Suryamurthy Nagamani,
Sukumar Arcod Anandhakrishnan
Publication year - 2013
Publication title -
microscopy research and technique
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.536
H-Index - 118
eISSN - 1097-0029
pISSN - 1059-910X
DOI - 10.1002/jemt.22226
Subject(s) - wurtzite crystal structure , dopant , scanning electron microscope , materials science , ionic bonding , adsorption , diffraction , layer (electronics) , doping , thin film , magnetic semiconductor , chemical engineering , spintronics , stoichiometry , nanotechnology , analytical chemistry (journal) , optoelectronics , zinc , chemistry , optics , ion , ferromagnetism , metallurgy , composite material , condensed matter physics , organic chemistry , physics , engineering
ABSTRACT Transparent conducting Mn‐doped ZnO thin films have been prepared by successive ionic layer by adsorption reaction (SILAR) method. The deposition conditions have been optimized based on their structure and on the formation of smoothness, adherence, and stoichiometry. The results of the studies by X‐ray diffraction, scanning electron microscope (SEM), reveal the varieties of structural and morphological modifications feasible with SILAR method. The X‐ray diffraction patterns confirm that the ZnO:Mn has wurtzite structure. The interesting morphological variations with dopant concentration are observed and discussed. The films' quality is comparable with those grown with physical methods and is suitable for spintronic applications. Microsc. Res. Tech. 76:751–755, 2013 . © 2013 Wiley Periodicals, Inc.