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The Hall–Petch law investigated by means of in situ straining experiments in lamellar TiAl and deformed Al
Author(s) -
Caillard Daniel,
Couret Alain
Publication year - 2009
Publication title -
microscopy research and technique
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.536
H-Index - 118
eISSN - 1097-0029
pISSN - 1059-910X
DOI - 10.1002/jemt.20679
Subject(s) - lamellar structure , materials science , in situ , grain boundary strengthening , condensed matter physics , composite material , physics , microstructure , grain boundary , meteorology
Dislocation‐boundary interactions are studied in TiAl and Al by means of in situ straining experiments in transmission electron microscopes (TEM). The results in TiAl allow us to measure the strength of domain boundaries against the motion of ordinary dislocations and twins. The results in Al are used to analyze the interaction between dislocations and cell walls. Parameters involved in the Hall‐Petch law are then deduced from these observations. Microsc. Res. Tech., 2009. © 2009 Wiley‐Liss, Inc.