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EBIC study of electron generation function in a‐Si:H
Author(s) -
Najar S.,
Equer B.
Publication year - 1994
Publication title -
microscopy research and technique
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.536
H-Index - 118
eISSN - 1097-0029
pISSN - 1059-910X
DOI - 10.1002/jemt.1070280608
Subject(s) - diode , electron beam induced current , materials science , amorphous silicon , silicon , electron , cathode ray , optoelectronics , amorphous solid , aluminium , layer (electronics) , analytical chemistry (journal) , atomic physics , chemistry , crystalline silicon , nanotechnology , physics , crystallography , chromatography , quantum mechanics , metallurgy
The electron beam induced current technique was used to study electron energy loss in amorphous hydrogenated silicon a‐Si:H. This study leads to the determination of the electron generation function which is needed when using the variable energy electron beam induced current technique (EBIC) analysis of a‐Si:H device. A series of identical n‐i‐p a‐Si:H diodes with a thin aluminium top electodes were fabricated and varying thicknesses of a‐Si:H layer were deposited on it. In EBIC measurements, the n‐i‐p diode was reverse biased at maximum potential. The electron range of a‐Si:H was determined directly by measuring the energy at which the electron beam is completely stopped in the top layer and no carrier generation is possible in the n‐i‐p diode. The generation function is then deduced from EBIC contrast measurements between the aluminium electrode and the top a‐Si:H layer. © 1994 Wiley‐Liss, Inc.