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Selected area polishing for precision TEM sample preparation
Author(s) -
Liu J. B.,
Tracy B. M.,
Gronsky R.
Publication year - 1993
Publication title -
microscopy research and technique
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.536
H-Index - 118
eISSN - 1097-0029
pISSN - 1059-910X
DOI - 10.1002/jemt.1070260209
Subject(s) - polishing , sample preparation , materials science , sample (material) , transistor , optoelectronics , nanotechnology , optics , composite material , chromatography , chemistry , physics , electrical engineering , engineering , voltage
A selected area mechanical polishing technique has been developed to improve the precision of cross‐sectional TEM sample preparation, based upon the early work of Benedict and colleagues [Benedict et al. (1990) MRS Symp. Proc. Vol. 199, p. 189]. TEM samples were made from a pre‐selected section through the middle of a 1 μm wide band of transistors extending laterally for more than 1 mm by precise control over the plane of polish with a corresponding reduction in sample preparation time. To illustrate the application of this technique, a uniformly thin, electron transparent TEM sample of a single, specific, failed transistor is obtained from a 4 mm by 10 mm device array. © Wiley‐Liss, Inc.