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Application of ultrahigh vacuum reflection electron microscopy for the study of clean silicon surfaces in sublimation, epitaxy, and phase transitions
Author(s) -
Latyshev A. V.,
Krasilnikov A. B.,
Aseev A. L.
Publication year - 1992
Publication title -
microscopy research and technique
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.536
H-Index - 118
eISSN - 1097-0029
pISSN - 1059-910X
DOI - 10.1002/jemt.1070200405
Subject(s) - sublimation (psychology) , epitaxy , silicon , materials science , electron microscope , optoelectronics , reflection (computer programming) , nanotechnology , optics , physics , psychology , layer (electronics) , computer science , psychotherapist , programming language
The construction and performance of an ultrahigh vacuum reflection electron microscope (UHV REM) on the base of a transmission electron microscope with top entry stage are described. Some results of in situ study of structural transformations on clean silicon surfaces during sublimation, surface phase transitions, and initial stages of epitaxial growth are shown.