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Synthesis and luminescent properties of polymer‐silica multilayer‐encapsulated perovskite quantum dots for optoelectronics
Author(s) -
Liu ShuangDe,
Chen TengMing
Publication year - 2020
Publication title -
journal of the chinese chemical society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.329
H-Index - 45
eISSN - 2192-6549
pISSN - 0009-4536
DOI - 10.1002/jccs.201800432
Subject(s) - photoluminescence , quantum yield , chemistry , thermal stability , perovskite (structure) , quantum dot , diode , optoelectronics , luminescence , yield (engineering) , polymer , light emitting diode , wavelength , chemical engineering , nanotechnology , materials science , optics , fluorescence , composite material , crystallography , organic chemistry , physics , engineering
Hydrophobic all‐inorganic perovskite quantum dots (IPQDs) CsPbX 3 (X = Cl, Br, and I) were synthesized using conventional solution methods. IPQDs are potential materials for lasers, solar cells, and displays because of their narrow full width at half‐maximum, optically tunable wavelength, and great photoluminescence quantum yield. Their shortcomings are structurally unstable and moisture sensitive. To overcome the poor stability, we have developed a chemical modification to form GQD + PMAO@SiO 2 that enhances their photoluminescence quantum yield (from 60 to ~90%), thermal stability (from 60 to ~90°C), and photochemical stability. The combination of the green‐emitting GQD + PMAO@SiO 2 and red‐emitting RQD + PMAO with a 450 nm blue InGaN‐based LED chip was used to fabricate a white light emitting diode with the correlated color temperature (CCT) value of 6,943 K and Commission Internationale del'Eclairage of (0.312, 0.290).