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Preparation of ZnIn 2 S 4 Film Electrodes by the SILAR Technique
Author(s) -
Yin Jianbo,
Jia Junhong,
Yi Gewen,
Wang Liqiang
Publication year - 2012
Publication title -
journal of the chinese chemical society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.329
H-Index - 45
eISSN - 2192-6549
pISSN - 0009-4536
DOI - 10.1002/jccs.201200425
Subject(s) - photocurrent , chemistry , tin oxide , electrode , ternary operation , band gap , indium tin oxide , thin film , layer (electronics) , semiconductor , adsorption , chemical engineering , oxide , analytical chemistry (journal) , nanotechnology , optoelectronics , materials science , chromatography , organic chemistry , computer science , engineering , programming language
Nanostructured ternary zinc indium sulfide (ZnIn 2 S 4 , ZIS) thin film electrodes were fabricated on fluorine doped tin oxide (FTO) coated glass substrates using the successive ionic layer adsorption and reaction (SILAR) technique. New procedures for the growth of ZIS films are presented. The X‐Ray diffraction (XRD) results show that the ZIS films are hexagonal structure and the band gap of the as‐prepared ZIS films is 2.5 eV. The photocurrent response of the films shows that the ZIS demonstrates the typical characteristic of n‐type semiconductor materials and the average response photocurrent of ZIS thin film is almost two times as high as that of ZnS.