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Growth of Ternary WC x N y Thin Films from a Single‐source Precursor, W(N t Bu) 2 (NEt 2 ) 2
Author(s) -
Chuang ShiowHuey,
Chiu HsinTien,
Chou YiHsuan,
Chen ShiouFan
Publication year - 2006
Publication title -
journal of the chinese chemical society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.329
H-Index - 45
eISSN - 2192-6549
pISSN - 0009-4536
DOI - 10.1002/jccs.200600184
Subject(s) - tungsten , chemistry , chemical vapor deposition , ternary operation , nitrogen , thin film , silicon , metal , analytical chemistry (journal) , phase (matter) , carbon fibers , deposition (geology) , crystallography , chemical composition , inorganic chemistry , mineralogy , nanotechnology , organic chemistry , materials science , paleontology , sediment , composite number , computer science , composite material , biology , programming language
An organoimido complex of tungsten, bis(tertbutylimido)bis(diethylamido)tungsten, W(N t Bu)2(NEt 2 ) 2 , is used as a single source precursor to deposit thin films of cubic phase tungsten carbonitride, WC x N y (x: 0.21–0.38, y: 0.62–0.76), by metal‐organic chemical vapor deposition on silicon substrates. In general, the N/W and C/W ratios decreased from 0.76 to 0.62 and 0.38 to 0.21, respectively with increasing the temperature of deposition from 500 to 650 °C. Based on the elemental composition and the composition of the gas phase products, it is proposed that the carbon and nitrogen atoms were incorporated through the activation of the ligands.