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Photoluminescence of I‐VII Semiconductor Compounds. Sensitized Luminescence from “Deep States” Recombination in CuBr/AgBr Nanocrystals
Author(s) -
Hwang L. C.,
Wei T.H.,
Hsia Y. L.,
Li C. M.,
Tu P. L.,
Wen T. C.
Publication year - 2006
Publication title -
journal of the chinese chemical society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.329
H-Index - 45
eISSN - 2192-6549
pISSN - 0009-4536
DOI - 10.1002/jccs.200600165
Subject(s) - photoluminescence , chemistry , luminescence , excited state , nanocrystal , borosilicate glass , semiconductor , doping , photochemistry , optoelectronics , excitation , laser , analytical chemistry (journal) , atomic physics , nanotechnology , optics , materials science , electrical engineering , physics , organic chemistry , engineering , chromatography
The photoluminescence (PL) properties of CuBr and CuBr/AgBr semiconductor nanocrystals (NCs) embedded in borosilicate glasses are measured under band‐to‐band excitation by a 355‐nm Nd YAG laser. We observed emission from CuBr (peaked at 520 nm) doped glass, which is associated with deep states in CuBr NCs. We also observed the sensitized blue to orange‐red emission in CuBr/AgBr‐glass systems (peaked at 520 and 570 nm), in which the luminescence intensity of CuBr decreases with increasing AgBr concentrations, while it is enhanced significantly around 570 nm. The results are discussed by the possible energy transfer between them, or by the multi‐exitonic recombination process which ejects an excited carrier from CuBr to AgBr NCs.