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Photoionization Profiles of Helium Autoionizing States in External DC Electric Fields
Author(s) -
Ho Yew Kam,
Fang TeKuei
Publication year - 2001
Publication title -
journal of the chinese chemical society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.329
H-Index - 45
eISSN - 2192-6549
pISSN - 0009-4536
DOI - 10.1002/jccs.200100082
Subject(s) - photoionization , chemistry , excited state , atomic physics , electric field , ground state , helium , autoionization , fano plane , ionization , ion , physics , quantum mechanics , organic chemistry , mathematics , pure mathematics
Electric‐field effects on the doubly excited resonant structures in He ground state photoionization are investigated theoretically using the complex‐rotation method with a B‐spline‐based configuration interaction (BSCI) basis. The variations of the structure profiles for the M L = 0 components of He (2,2a), (2,3 a), and (2,4a) 1 P° and 1 D e resonance pairs for selected DC electric field strengths are examined. The changes of the resonant energies, widths, Fano q‐parameters, and back ground cross sections, are also presented.