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Calculated Life Times of the First (v=1) Hydrogen Stretching Excited State on Hydrogen‐Covered H/Ge(111 )Germanium Surface
Author(s) -
Hong ShoChing,
Ho MingShun,
Lu HsiuFeng,
Sun YingChieh
Publication year - 2000
Publication title -
journal of the chinese chemical society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.329
H-Index - 45
eISSN - 2192-6549
pISSN - 0009-4536
DOI - 10.1002/jccs.200000119
Subject(s) - germanium , chemistry , excited state , hydrogen , silicon , atomic physics , physics , organic chemistry
In the present study, were port the calculated life times of the first hydrogen stretching excited state on a hydrogen‐covered H/Ge(111) germanium surface using molecular dynamics simulation based on the Bloch‐Redfield the ory. The life time was found to be 20 mi cro sec onds at room temperature, four or derslon ger than the hydrogen stretches on aH/Si(111) silicon surface. In addition, the calculations for the Ge‐D and Ge‐T stretches gave life times in the time scale of hundreds and tens of nano seconds, respectively, at room temperature. The thermal effect and an effect of the Ge‐Ge‐H bending frequency in the calculated life times are discussed.