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Development of Intense and Compact THz‐Radiation Source Using Femtosecond‐Laser Irradiated InAs Emitter in a High Magnetic Field
Author(s) -
Ohtake Hideyuki,
Ono Shingo,
Sakai Masahiro,
Kawahata Eiji,
Kozeki Toshimasa,
Murakami Hidetoshi,
Liu Zhenlin,
Tsukamoto Takeyo,
Sarukura Nobuhiko
Publication year - 2000
Publication title -
journal of the chinese chemical society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.329
H-Index - 45
eISSN - 2192-6549
pISSN - 0009-4536
DOI - 10.1002/jccs.200000083
Subject(s) - femtosecond , terahertz radiation , laser , magnetic field , magnet , chemistry , saturation (graph theory) , optoelectronics , common emitter , excitation , radiation , irradiation , optics , materials science , physics , mathematics , nuclear physics , quantum mechanics , combinatorics
THz‐radiation power from femtosecond pulse irradiated InAs is found to be saturated at the magnetic field around 3T. We have found this saturation magnetic field drastically depends on geometrical layout and interesting magnetic field dependence of the center frequency for the THz radiation. Additionally, a compact THz‐radiation source using an InAs semiconductor is demonstrated with a turn‐key femtosecond fiber laser as an excitation source and a newly designed 2‐T permanent magnet. By using a newly designed magnetic circuit, a compact permanent magnet which can exceed the remanence magnetic field was obtained. This compact source is sufficiently intense for absorption spectroscopy.