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Chemical Vapor Deposition of SnO 2 Thin Films from Bis(β‐diketonato)tin Complexes
Author(s) -
Chi KaiMing,
Lin ChiaCh'i,
Lu YaHui,
Liao JuHsiou
Publication year - 2000
Publication title -
journal of the chinese chemical society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.329
H-Index - 45
eISSN - 2192-6549
pISSN - 0009-4536
DOI - 10.1002/jccs.200000057
Subject(s) - chemistry , tin , chemical vapor deposition , thin film , deposition (geology) , trigonal bipyramidal molecular geometry , silicon , analytical chemistry (journal) , titanium nitride , inorganic chemistry , nitride , crystal structure , crystallography , nanotechnology , organic chemistry , layer (electronics) , materials science , paleontology , sediment , biology
A series of bis(β‐diketonato)tin compounds have been systematically synthesized and examined as precursors for chemical vapor deposition of SnO 2 thin films. These complexes were characterized by elemental analyses and NMR, IR and mass spectroscopic methods. X‐ray single‐crystal determination of Sn(tfac) 2 reveals that the complex possesses a distorted trigonal bipyramidal structure. The SnO 2 films can be deposited on the substrates such as silicon, titanium nitride, and glass by using Sn(hfac) 2 , Sn(tfac) 2 and Sn(acac) 2 as CVD precursors at deposition temperatures of 300‐600°C with a carrier gas of O 2 . The deposition rates range from 20 to 600 Å/min. Deposited films have been characterized by XRD, SEM, AFM, AES and AAS analyses.