Premium
Low‐Pressure Chemical Vapor Deposition of Silicon Carbide Thin Films from Organopolysilanes
Author(s) -
Chiu HsinTien,
Wu PeiFang
Publication year - 1991
Publication title -
journal of the chinese chemical society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.329
H-Index - 45
eISSN - 2192-6549
pISSN - 0009-4536
DOI - 10.1002/jccs.199100039
Subject(s) - chemistry , chemical vapor deposition , x ray photoelectron spectroscopy , thin film , silicon carbide , scanning electron microscope , combustion chemical vapor deposition , silicon , crystallite , analytical chemistry (journal) , deposition (geology) , polycrystalline silicon , chemical engineering , carbon film , nanotechnology , composite material , crystallography , materials science , organic chemistry , layer (electronics) , thin film transistor , paleontology , sediment , engineering , biology
(Me 3 Si) 2 SiMe 2 , (Me 3 Si) 3 SiMe and (Me 3 Si) 4 Si were used as precursors for the deposition of polycrystalline β‐SiC thin films on silicon substrates at 1000–1200°C in a low‐pressure hot‐wall chemical vapor deposition reactor. The thin films were analyzed by X‐ray diffraction, scanning electron microscopy and X‐ray photoelectron spectroscopy.