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An Internal‐Standard Method for Determination of Trace Impurities in Semiconductor Grade Silicon by Neutron Activation Analysis
Author(s) -
Chou ChiChiang,
Pung TongChuin,
Tsai HuiTuh,
Wu ShawChii
Publication year - 1981
Publication title -
journal of the chinese chemical society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.329
H-Index - 45
eISSN - 2192-6549
pISSN - 0009-4536
DOI - 10.1002/jccs.198100026
Subject(s) - chemistry , neutron activation analysis , silicon , internal standard , impurity , semiconductor , trace (psycholinguistics) , analytical chemistry (journal) , neutron activation , trace amounts , neutron , radiochemistry , chromatography , nuclear physics , mass spectrometry , optoelectronics , materials science , medicine , linguistics , philosophy , physics , organic chemistry , alternative medicine , pathology
An internal‐standard method 1–4) has been applied for the determination of La, Sb, Au, Cr and Ag in silicon single‐crystal by neutron activation analysis using cobalt as an internal‐standard element. No chemical separation is required in this case and the precision obtained with the present method is satisfactory.