z-logo
Premium
Application of SINDO1 to silicon, aluminum, and magnesium compounds
Author(s) -
Jug Karl,
Iffert Rüdiger
Publication year - 1988
Publication title -
journal of computational chemistry
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.907
H-Index - 188
eISSN - 1096-987X
pISSN - 0192-8651
DOI - 10.1002/jcc.540090107
Subject(s) - mndo , silicon , magnesium , parametrization (atmospheric modeling) , aluminium , atomic orbital , dipole , ground state , computational chemistry , chemistry , standard enthalpy of formation , ionization , atomic physics , physics , ion , molecule , quantum mechanics , electron , organic chemistry , radiative transfer
SINDO1 calculations are presented for ground state geometries, heats of formation, ionization potentials and dipole moments of silicon, aluminum and magnesium compounds. These calculations are based on a new parametrization of SINDO1 for second‐row elements. Important features are the inclusion of 3 d orbitals and the explicit evaluation of zero point energies. A comparison with MNDO data is presented.

This content is not available in your region!

Continue researching here.

Having issues? You can contact us here
Accelerating Research

Address

John Eccles House
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom