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Zinc‐Oxynitride TFTs: Toward a New High‐Mobility Low‐Cost Thin‐Film Semiconductor
Author(s) -
Ye Yan
Publication year - 2013
Publication title -
information display
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.182
H-Index - 20
eISSN - 2637-496X
pISSN - 0362-0972
DOI - 10.1002/j.2637-496x.2013.tb00594.x
Subject(s) - backplane , thin film transistor , semiconductor , materials science , optoelectronics , zinc , amorphous semiconductors , engineering physics , nanotechnology , electrical engineering , silicon , engineering , layer (electronics) , metallurgy
Demands for high‐performance, low‐cost, and low‐energy‐consumption displays continue to drive the development of new semiconductor materials. The success of the metal‐oxide semiconductor IGZO for display backplanes has triggered even more activity, and zinc oxynitride is proposed as a possible solution.