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Direct observation of the electrical activity of coincidence‐site lattice boundaries in location‐controlled silicon islands using scanning spread resistance microscopy
Author(s) -
Matsuki Nobuyuki,
Ishihara Ryoichi,
Beenakker Kees
Publication year - 2009
Publication title -
information display
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.182
H-Index - 20
eISSN - 2637-496X
pISSN - 0362-0972
DOI - 10.1002/j.2637-496x.2009.tb00078.x
Subject(s) - grain boundary , spreading resistance profiling , materials science , silicon , scanning electron microscope , microscopy , electron backscatter diffraction , lattice (music) , diffraction , optics , crystallography , optoelectronics , microstructure , chemistry , composite material , physics , acoustics
Scanning spread resistance microscopy (SSRM) was used to investigate the electrical activity of coincidence‐site lattice (CSL) boundaries in location‐controlled silicon islands fabricated using the μ‐Czochralski (μ‐CZ) process. Using SSRM, the electrical activity of random and Σ3 and Σ9 CSL boundaries, which are determined by electron backscattered diffraction (EBSD) analysis, were observed. Quantitative evaluation of the microscopic current mapping by SSRM revealed that Σ3 and Σ9 CSL boundaries, of which most of them are coherent, have much less electrical activity than the random grain boundaries. Some of the Σ3 and Σ9 CLS boundaries seemed to be incoherent, while the number of such incoherent CSL boundaries are very much limited according to previous TEM investigation and showed increased activities; however, their activities are still lower than that of the random boundaries.