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P‐117: Investigation on Movement of Ions in the Fringe Field Switching Mode Depending on Resistivity of Alignment Layer and Dielectric Anisotropic Sign of Liquid Crystal
Author(s) -
Kim DaeHyung,
Kim Da Eun,
Lee Jun Hee,
Song Ki Hoon,
Ahn Seon Hong,
Lee SeungHee
Publication year - 2014
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/j.2168-0159.2014.tb00375.x
Subject(s) - electrical resistivity and conductivity , anisotropy , materials science , ion , dielectric , liquid crystal , layer (electronics) , crystal (programming language) , condensed matter physics , optics , chemistry , optoelectronics , composite material , physics , organic chemistry , quantum mechanics , computer science , programming language
Ion movement in liquid crystal displays plays crucial role in residual dc associated with image sticking. This paper investigatesadsorption and desorption of ions at interfaces between liquid crystal and alignment layer depending on resistivity of alignment layer and sign of dielectric anisotropy of liquid crystal in thefringe field switching (FFS) liquid crystal cell. Our studies show that the resistivity of alignment layer mainly determines ion movement such that the one with lower resistivity shows faster absorption and desorption at the interface than that of the one with higher resistivity.