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P‐88: All‐Inorganic Quantum‐Dot Light‐Emitting Devices Prepared by Solution‐Process Route
Author(s) -
Li Zhi,
Qasim Khan,
Chen Jing,
Lei Wei,
Pan Jiangyong,
Li Qing,
Xia Jun,
Tu Yan
Publication year - 2014
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/j.2168-0159.2014.tb00345.x
Subject(s) - non blocking i/o , quantum dot , materials science , spin coating , layer (electronics) , optoelectronics , luminescence , solution process , coating , nanotechnology , chemical engineering , chemistry , catalysis , biochemistry , engineering
We have fabricated all‐inorganic quantum‐dot light‐emitting devices(QDLED) with NiO as a hole transporting layer and TiO 2 as a inorganic electron transporting layer. P‐type NiO and n‐type TiO 2 charge‐transport layers were synthesized by sol‐gel method using spin‐coating technique. The thickness of TiO2 layer was optimized with different spin‐coating speed, and studied the luminescence characteristics of devices. Results indicated devices with 4000 rpm TiO 2 layer has lower turn voltage 4.2V and higher EL intensity.