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P‐28: Study on One Infrequent Influencing Factor of TFT‐LCD Life
Author(s) -
Feng Bin,
Huang HaiQin,
Cui XiaoPeng,
Yuan JianFeng,
Shao XiBin
Publication year - 2014
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/j.2168-0159.2014.tb00272.x
Subject(s) - thin film transistor , enhanced data rates for gsm evolution , liquid crystal display , stress (linguistics) , stability (learning theory) , materials science , computer science , optoelectronics , telecommunications , nanotechnology , layer (electronics) , linguistics , philosophy , machine learning
Through a lot of analysis and test on a rare failure (ongoing black mura), we found that the distance of TFT U shaped channel to the gate line edge have great influence on the stability of TFT device. When the distance is less than a critical value, the characterization of TFTs would degrade after a long‐time of stress or aging, lead to decrease of Ion and increase of Vth, resulting in poor life time of TFT‐LCD for the abnormal black phenomenon. By BTPS(Bias, Temperature, Photo, Stress) [1‐2] and aging test, we compare the stability of TFTs with different distance value, establish calculation model and design spec. Effective improvement have achieved by process adjusting and design changes.