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P‐22: Top‐Gate Thin Film Transistor with ZnO:N Channel Fabricated by Room Temperature RF Magnetron Sputtering
Author(s) -
Zhang Meng,
Zhou Wei,
Chen Rongsheng,
Wong Man,
Kwok HoiSing
Publication year - 2014
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/j.2168-0159.2014.tb00266.x
Subject(s) - thin film transistor , materials science , optoelectronics , sputter deposition , sputtering , fabrication , transistor , doping , layer (electronics) , thin film , active layer , cavity magnetron , crystallization , nanotechnology , electrical engineering , voltage , chemistry , medicine , alternative medicine , engineering , organic chemistry , pathology
In this work, top‐gate thin film transistor (TFT) with ZnO doped nitrogen (ZnO:N) channel fabricated by room temperature rf magnetron sputtering is demonstrated. ZnO:N film is obtained by introducing N 2 ambient when sputtering ZnO. The crystallization of ZnO:N is better compared to ZnO film. The test results indicate that the ZnO:N could improve the electrical characteristics as an active channel layer for a TFT device. This in‐process doping method may be a valuable technique for the fabrication of the practical and stable TFT devices.