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P‐21: n‐type Organic Thin Film Transistors with High Operational Stability
Author(s) -
Roh Jeongkyun,
Kang ChanMo,
Shin Hyeonwoo,
Kwak Jeonghun,
Jung Byung Jun,
Lee Changhee
Publication year - 2014
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/j.2168-0159.2014.tb00265.x
Subject(s) - thin film transistor , materials science , diimide , transistor , optoelectronics , organic semiconductor , polymer , threshold voltage , electron mobility , semiconductor , nanotechnology , voltage , layer (electronics) , chemistry , electrical engineering , composite material , molecule , organic chemistry , perylene , engineering
n‐type organic thin film transistors (OTFTs) with high operational stability was demonstrated. The operational stability of N,N′‐ditridecylperylene‐3,4,9,10‐tetracarboxylic diimide (PTCDI‐C13)‐based OTFTs was improved by engineering organic semiconductor‐gate insulator interface with hydrophobic polymers. Under high gate bias stress (equivalent to the electric field of 3MV/cm) for two hours, OTFTs with hydrophobic polymers showed small threshold voltage shift around 2 V. Moreover, the electron mobility was improved from 0.038 to 0.14–0.15 cm 2 /Vs with hydrophobic polymers.