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P‐14: High Mobility BCE Al doped ZnSnInO TFT Fabricated Using Mixed Acid Mo/Al/Mo Etchant
Author(s) -
Park SangHee Ko,
Cho Sung Haeng,
Ryu Minki,
Kim Heeok,
Kwon OhSang,
Park Eunsook,
Yang JongHeon,
Kim Jong Woo,
Hwang ChiSun,
Lim Sun Kwon
Publication year - 2014
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/j.2168-0159.2014.tb00258.x
Subject(s) - passivation , thin film transistor , materials science , fabrication , etching (microfabrication) , molybdenum , oxide thin film transistor , amorphous solid , doping , layer (electronics) , optoelectronics , electrode , metallurgy , nanotechnology , chemistry , crystallography , medicine , alternative medicine , pathology
We fabricated amorphous AlZnSnInO TFT with back channel etch structure. Source/drain electrode of molybdenum (Mo) was formed using mixed acid based Mo/Al/Mo etchant for the first time in the fabrication of a‐oxide BCE TFT. SEM and ESCA analysis showed no Mo residue on the surface of active layer. The BCE AlZnSnInO TFT showed mobility of 23.2 cm 2 /V.s, S.S of 0.13 V/dec., and Von of ‐0.5V. We show highly stable high mobility BCE TFT achieved by optimizing passivation process and active layer deposition condition.