P‐10: Oxide TFT Fabrication by Nano‐Rheology Printing for Display Application | Zendy

Koyama Hiroaki | Zendy; Fukada Kazuhiro | Zendy; Murakami Yoshitaka | Zendy; Tue Phan Trong | Zendy; Tanaka Shogo | Zendy; Inoue Satoshi | Zendy; Shimoda Tatsuya | Zendy

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P‐10: Oxide TFT Fabrication by Nano‐Rheology Printing for Display Application

Author(s) -

Koyama Hiroaki,

Fukada Kazuhiro,

Murakami Yoshitaka,

Tue Phan Trong,

Tanaka Shogo,

Inoue Satoshi,

Shimoda Tatsuya

Publication year - 2014

Publication title -

sid symposium digest of technical papers

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.351

H-Index - 44

eISSN - 2168-0159

pISSN - 0097-966X

DOI - 10.1002/j.2168-0159.2014.tb00254.x

Subject(s) - thin film transistor , materials science , active matrix , rheology , fabrication , oxide , nano , oxide thin film transistor , transistor , optoelectronics , nanotechnology , layer (electronics) , composite material , electrical engineering , metallurgy , engineering , medicine , alternative medicine , pathology , voltage

A nano‐rheology printing method was used to fabricate oxide thin‐film transistors (TFTs). This method utilizes the rheological properties of oxide precursor gels that are imprinted at an elevated temperature. TFTs designed for an active matrix array were successfully developed with high alignment accuracy, and the operation of its transistors was confirmed.

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