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P‐9: Study of the Origin of Major Donor States in Oxide Semiconductor
Author(s) -
Oota Masashi,
Ishihara Noritaka,
Nakashima Motoki,
Kurosawa Yoichi,
Hirohashi Takuya,
Takahashi Masahiro,
Yamazaki Shunpei,
Obonai Toshimitsu,
Hosaka Yasuharu,
Koezuka Junichi,
Kanzaki Yohsuke,
Matsukizono Hiroshi,
Kaneko Seiji,
Matsuo Takuya
Publication year - 2014
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/j.2168-0159.2014.tb00253.x
Subject(s) - reliability (semiconductor) , semiconductor , oxide , photomask , materials science , optoelectronics , mechanism (biology) , nanotechnology , physics , metallurgy , quantum mechanics , resist , power (physics) , layer (electronics)
The investigation of donor states is an important issue for characteristics and reliability of FETs. We succeeded in identifying the origin of donor states of InGaZnO through experiments and calculations. In addition, the number of photomasks is reduced by applying this mechanism.