Premium
P‐7: High Speed a‐IGZO TFT‐based Gate Driver by using Back Channel Etched Structure
Author(s) -
Um Jae Gwang,
Mativenga Mallory,
Geng Di,
Li Xiuling,
Jang Jin
Publication year - 2014
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/j.2168-0159.2014.tb00251.x
Subject(s) - thin film transistor , materials science , ring oscillator , optoelectronics , subthreshold conduction , transistor , swing , amorphous solid , capacitance , electrical engineering , threshold voltage , oscillation (cell signaling) , wafer , subthreshold swing , channel (broadcasting) , voltage , electrode , nanotechnology , physics , engineering , layer (electronics) , chemistry , acoustics , crystallography , cmos , biochemistry , quantum mechanics
We demonstrated the high performance back–channel‐etched (BCE) amorphous‐InGaZnO (a‐IGZO) thin‐film transistor (TFT) circuits. The TFTs exhibited the field‐effect mobility, turn‐on voltage and subthreshold swing of 18 cm 2 /V•s, ‐0.1 V, and 258 mV/dec, respectively. The oscillation frequency of an 11 stages ring‐oscillator is ~334.1 kHz, at VDD = 20 V. The 320 stages 11T2C shift‐register operated well up to the last stage with rising and falling times of 950 and 690 ns, respectively. Good performance is attributed to damage‐free back channel wet etch process and small overlap capacitance between the gate and source/drain electrodes.