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P‐6: Static Reliability of Bridged‐Grain Poly‐Si TFTs
Author(s) -
Zhang Meng,
Zhou Wei,
Chen Rongsheng,
Zhao Shuyun,
Wong Man,
Kwok HoiSing
Publication year - 2014
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/j.2168-0159.2014.tb00250.x
Subject(s) - thin film transistor , reliability (semiconductor) , materials science , transistor , optoelectronics , nanotechnology , electrical engineering , thermodynamics , engineering , power (physics) , physics , layer (electronics) , voltage
The characteristics of bridged‐grain (BG) poly‐Si thin film transistors (TFTs) with different BG periods and the static reliability of BG poly‐Si TFTs was examined and discussed. The characterizations show that the length of the sub‐channels mainly affects the on‐state current and the sub‐threshold characteristics. BG TFTs exhibit better hot carrier reliability, better self‐heating reliability, better negative bias temperature instability and good immunity against water.