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P‐5: Pseudo‐CMOS Circuits using Amorphous In‐Sn‐Zn‐O Thin‐Film Transistors
Author(s) -
Kimura Mutsumi,
Sawamoto Daisuke,
Matsuda Tokiyoshi,
Wang Dapeng,
Furuta Mamoru,
Kasami Masashi,
Tomai Shigekazu,
Yano Koki
Publication year - 2014
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/j.2168-0159.2014.tb00249.x
Subject(s) - cmos , electronic circuit , transistor , materials science , electronic engineering , optoelectronics , electrical engineering , engineering , voltage
We have developed pseudo‐CMOS circuits using α‐ITZO TFTs. The pseudo‐CMOS circuits have more excellent circuit characteristics than the conventional circuits. Either of the two pseudo‐CMOS circuits should be selected on demand by considering whether the static or dynamic characteristic is important. These results are useful to integrate driver circuits into FPDs.