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58.3: Invited Paper : Highly Reliable InGaZnO Thin Film Transistor Backplane for 55‐inch 4K2K Organic Light‐Emitting Diode Display
Author(s) -
Hayashi Hiroshi,
Nakazaki Yoshiaki,
Izumi Tomoaki,
Sasaki Atsushi,
Nakamura Tetsuroh,
Takeda Eiji,
Saitoh Tohru,
Goto Masashi,
Takezawa Hiroyoshi
Publication year - 2014
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/j.2168-0159.2014.tb00225.x
Subject(s) - backplane , thin film transistor , oled , materials science , optoelectronics , diode , transistor , electrical engineering , voltage , layer (electronics) , nanotechnology , engineering
InGaZnO (IGZO) TFT backplane for large‐size high‐resolution organic light‐emitting diode (OLED) display has been developed. The uniformity of TFT electrical characteristics and stability was improved by the uniform IGZO composition realized by controlling ion bombardment direction. TFT electrical stability was improved by plasma treatments of the front and back channel interfaces. The 55‐inch 4K2K OLED display was successfully demonstrated with the backplane fabricated in a generation 8.5 production line.