Premium
53.1: Development of Oxide‐TFT OLED‐TV Technologies
Author(s) -
Shih TsungHsiang,
Ting HungChe,
Lin PeiLing,
Chen ChihLei,
Tsai Lun,
Chen ChiaYu,
Lin LiFong,
Liu ChunHsin,
Chen ChihCheng,
Lin HongShen,
Chang LeeHsun,
Lin YuHsin,
Hong HongJye
Publication year - 2014
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/j.2168-0159.2014.tb00201.x
Subject(s) - thin film transistor , oled , materials science , optoelectronics , indium tin oxide , oxide thin film transistor , amorphous solid , chemical vapor deposition , ferrule , electrical engineering , nanotechnology , layer (electronics) , engineering , chemistry , organic chemistry , cable gland
We reported amorphous Indium‐Gallium‐Zinc‐Oxide (a‐IGZO) TFT OLED TV panel development in AUO. The Generation 6 (G6) threshold voltage uniformity can be lower than 0.8V. The RGB side‐by‐side OLED patterning was realized by fine metal mask. By the application of a source follower connection pixel compensation circuit, the panels driven by AUO engine show excellent characteristics. For future product performance requirement, amorphous Indium‐Tin‐Zinc‐Oxide (a‐ITZO) TFT was developing, high mobility as 33.2 cm2/Vs was achieved. Metal‐organic chemical vapor deposition (MOCVD) system was also used to improve the mobility of IGZO TFT. To improve manufacturing efficiency of OLED process, inkjet printing technology is also under development in AUO.