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33.3: High Mobility and Highly Stable Aluminum‐doped Indium Zinc Tin Oxide Thin‐Film Transistors
Author(s) -
Cho Sung Haeng,
Park SangHee Ko,
Hwang ChiSun,
Ryu Min Ki,
Eom In Yong,
Kim Jong Woo,
Yang JongHeon,
Kim HeeOk,
Kwon OSang,
Park EunSuk,
Lim Sun Kwon
Publication year - 2014
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/j.2168-0159.2014.tb00123.x
Subject(s) - materials science , thin film transistor , optoelectronics , doping , indium , stress (linguistics) , zinc , tin , transistor , aluminium , indium tin oxide , thin film , gate oxide , aluminum oxide , electron mobility , oxide , layer (electronics) , nanotechnology , electrical engineering , metallurgy , linguistics , philosophy , engineering , voltage
We report highly stable and high mobility aluminum‐doped indium zinc tin oxide (AIZTO) thin‐film transistor with field effect mobility larger than 30 cm 2 /Vs in the bottom gate, etch‐stopper structure. The electrical instabilities against positive gate bias stress, negative gate bias stress, and negative gate bias under illumination stress are investigated..