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33.2: A New Process and Structure for Oxide Semiconductor LCDs
Author(s) -
Yang JoonYoung,
Lee Sul,
Cho SeongJoon,
Jun MyungChul,
Kang InByeong,
Yeo Sang Deog,
Park JungHo
Publication year - 2014
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/j.2168-0159.2014.tb00122.x
Subject(s) - thin film transistor , materials science , optoelectronics , liquid crystal display , transmittance , process (computing) , line (geometry) , channel (broadcasting) , semiconductor , computer science , electrical engineering , nanotechnology , engineering , layer (electronics) , geometry , mathematics , operating system
A coplanar TFT structure has excellent characteristics in Δ Vp and channel length compared to conventional etch stopper TFT structure in AOS TFT LCD. In this paper, we introduce new 5 mask coplanar structure which reduces two mask steps compared to conventional 7 mask process. And we fabricated 4.5‐inch HD resolution panel in our R&D line with our new structure, and its transmittance is 12.5% improved by eliminating contact hole pattern.