Premium
33.1: Channel‐Etched C‐Axis Aligned Crystalline Oxide Semiconductor FET Using Cu Wiring
Author(s) -
Akimoto Kengo,
Shima Yukinori,
Jincho Masami,
Nakazawa Yasutaka,
Okazaki Kenichi,
Koezuka Junichi,
Ohta Masashi,
Ishihara Noritaka,
Nakashima Motoki,
Hirohashi Takuya,
Takahashi Masahiro,
Yamazaki Shunpei
Publication year - 2014
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/j.2168-0159.2014.tb00121.x
Subject(s) - materials science , semiconductor , optoelectronics , field effect transistor , transistor , oxide , etching (microfabrication) , channel (broadcasting) , nanotechnology , electrical engineering , layer (electronics) , metallurgy , engineering , voltage
A channel‐etched IGZO field‐effect transistor (FET) using Cu wiring was fabricated. Because little Cu is diffused into a c‐axis aligned crystalline oxide semiconductor (CAAC‐OS), which is c‐axis aligned crystalline IGZO, the use of the CAAC‐OS provides favorable characteristics for a channel‐etched FET.