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32.4: Invited Paper : Solution Processed Single‐Grain Si TFTs on a Plastic Substrate
Author(s) -
Ishihara Ryoichi,
Zhang Jin,
Zwan Michiel v. d.,
Trifunovic Miki,
Takagishi Hideyuki,
Shimoda Tatsuya
Publication year - 2014
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/j.2168-0159.2014.tb00118.x
Subject(s) - materials science , substrate (aquarium) , foil method , optoelectronics , polyimide , thin film transistor , crystallization , excimer laser , dehydrogenation , composite material , laser , optics , chemical engineering , layer (electronics) , oceanography , physics , engineering , geology , biochemistry , chemistry , catalysis
High‐mobility single‐grain Si TFTs have been successfully fabricated on a polyimide‐coated substrate with solution process of Si. After doctor‐blade coating of cyclopentasilane (CPS), a‐Si:H was obtained at a temperature below 350°C. With dehydrogenation and crystallization by excimer laser, grains with a maximum diameter of 3 μm were obtained at predetermined positions. Single‐grain Si TFTs showed mobilities of 460cm 2 /Vs and 121cm 2 /Vs for electrons and holes, respectively. The devices were transferred onto a PEN foil and operated under a bending diameter as small as 6 mm. The results suggest the proposed technology to be attractive for various innovative applications, not only for driver‐integrated flexible displays, but also for ultra‐high‐frequency RF‐ID tag, highly‐sensitive bio‐medical sensors and eventually for integrated smart‐systems on a plastic.