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21.1: A 513‐ppi FFS‐Mode TFT‐LCD using CAAC Oxide Semiconductor Fabricated by a 6‐Mask Proces
Author(s) -
Yamashita Akio,
Kubota Daisuke,
Moriya Koji,
Kubota Yusuke,
Jikumaru Mika,
Nakano Masaru,
Baba Haruyuki,
Hirakata Yoshiharu,
Koyama Jun,
Yamazaki Shunpei,
Katayama Masahiro,
Misawa Chieko,
Matsukizono Hiroshi,
Kanzaki Yohsuke,
Kaneko Seiji,
Ueda Naoki,
Mori Shigeyasu,
Matsuo Takuya
Publication year - 2014
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/j.2168-0159.2014.tb00072.x
Subject(s) - materials science , thin film transistor , semiconductor , optoelectronics , liquid crystal display , oxide , planarity testing , aperture (computer memory) , planar , computer science , engineering , nanotechnology , chemistry , computer graphics (images) , layer (electronics) , mechanical engineering , metallurgy , crystallography
Abstract A driving method which does not need planarity for high definition and enables low frequency driving was examined. Further, a 513‐ppi FFS‐mode liquid crystal display (LCD) panel with high aperture ratio was fabricated via a six‐mask process, using a technique that combines an oxide semiconductor and an oxide conductor.