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13.3L: Late‐News Paper : Roll‐to‐Roll Processed and Top‐Gate‐Structured Amorphous InGaZnO TFTs with Large Source/Drain Offsets
Author(s) -
Kim Kyung Min,
Han Yong Hee,
Lee ShinBok,
Won Do Yong,
Kook Yun Ho,
Choi Sungwoo,
Kim Chul Ho,
Ryu Soon Sung,
Yang MyoungSu,
Kang InByeong
Publication year - 2014
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/j.2168-0159.2014.tb00043.x
Subject(s) - thin film transistor , materials science , optoelectronics , amorphous solid , threshold voltage , subthreshold conduction , offset (computer science) , transistor , electrical engineering , voltage , nanotechnology , computer science , chemistry , engineering , crystallography , programming language , layer (electronics)
In this article, we described a roll‐to‐roll (R2R) deposition processed amorphous indium‐gallium‐zinc oxide (a‐IGZO) thin‐film transistors (TFTs), depending on the source/drain (S/D) offset length from 10 to 80μm equally at S/D each side. It was fabricated at a maximum temperature under 250°C. Increasing length of S/D offset makes the device performance be lowered, but additional process at the offset region can minimize this problem. We demonstrated that the R2R deposition processed TFTs exhibited competitive device characteristics with large S/D offset (∼80μm), including an averaged field‐effect mobility of 3.06cm 2 /Vs, an on‐to‐off current ratio of ∼10 7 , a threshold voltage of 1.33V, and a subthreshold gate swing of 0.54V/dec.