Premium
8.4L: Late‐News Paper : Electrical Properties of a‐IGZO Films Depending on Trap States
Author(s) -
Kim JuYeon,
Shin Sang Won,
Jeong ChangOh,
Yun EuiJung,
Bae Byung Seong
Publication year - 2014
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/j.2168-0159.2014.tb00024.x
Subject(s) - annealing (glass) , materials science , thin film , wavelength , optoelectronics , relaxation (psychology) , oxygen , chemistry , nanotechnology , composite material , psychology , social psychology , organic chemistry
We investigated the photo‐response of a‐IGZO thin films under light illumination. The photo‐response was compared before and after annealing. As the annealing temperatures increase, photo‐response changes quite substantially. We explored the photo‐responses of a‐IGZO thin films under light illumination with various wavelengths. The photo‐responses involve the photo‐excitation and the dark relaxation phenomena in a‐IGZO thin films. The photo‐responses of samples were monitored and analyzed in terms of the trap states and oxygen vacancies. The quite large change of photo‐response by the annealing was analyzed in terms of trap states and oxygen vacancies.