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8.3: Invited Paper : Advantages of IGZO Oxide Semiconductor
Author(s) -
Matsuo Takuya,
Mori Shigeyasu,
Ban Atsushi,
Imaya Akihiko
Publication year - 2014
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/j.2168-0159.2014.tb00023.x
Subject(s) - semiconductor , thin film transistor , oxide , materials science , oxide thin film transistor , silicon , amorphous semiconductors , optoelectronics , silicon oxide , amorphous silicon , engineering physics , nanotechnology , engineering , metallurgy , crystalline silicon , silicon nitride , layer (electronics)
Oxide semiconductors as represented by InGaZnO have been developed and used for driving TFT of LCD. Since there have been discussions on comparison of oxide semiconductors with amorphous and/or poly‐silicon which have been conventionally used for LCD, this paper will summarize pros and cons of each semiconductor material, deepen discussions for future developments, and clarify advantages of oxide semiconductors.