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3.3: Invited Paper : Future Possibility of C‐Axis Aligned Crystalline Oxide Semiconductors Comparison with Low‐Temperature Polysilicon
Author(s) -
Yamazaki Shunpei
Publication year - 2014
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/j.2168-0159.2014.tb00003.x
Subject(s) - grain boundary , materials science , oxide , semiconductor , substrate (aquarium) , optoelectronics , metallurgy , microstructure , geology , oceanography
A C‐axis aligned crystalline oxide semiconductor (CAAC‐OS) has a crystal structure without grain boundaries and provides FETs with extremely low off‐state current. An ultrahigh‐resolution display using a CAAC‐OS is free from unevenness caused by grain boundaries. CAAC‐OSs use a small number of masks, and therefore can be easily applied to large‐substrate processes.