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P.62: Effects of Amorphous InGaZnO Thin Film Transistors with Various Buffer Layers on Polyimide Substrate Under Negative Bias‐temperature Stresses
Author(s) -
Ok KyungChul,
Park SangHee Ko,
Hwang ChiSun,
Shin Hyun Soo,
Kim Daehwan,
Bae Jonguk,
Chin Byung Doo,
Park JinSeong
Publication year - 2013
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/j.2168-0159.2013.tb06453.x
Subject(s) - materials science , buffer (optical fiber) , thin film transistor , layer (electronics) , oxide , amorphous solid , polyimide , penetration (warfare) , optoelectronics , substrate (aquarium) , oxide thin film transistor , transistor , composite material , chemistry , electrical engineering , crystallography , metallurgy , oceanography , operations research , voltage , geology , engineering
Buffer layers on flexible substrates have strongly affected to electrical performance and instability in oxide TFTs. The oxide TFT on proper buffer layer/PI substrate showed better electrical performance than that on other buffer layers because the buffer layer with high gas diffusion barrier properties can suppress to generate defect states in semiconductor and/or interface from hydrogen and water penetration. The origins of flexible oxide TFT instabilities were systematically investigated by using in‐situ/ex‐situ measurement and chemical/physical analysis.