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P.157L: Late News Poster : Characterization of Asymmetrical Negative Bias Stress Effect on the Density‐of‐States and Parasitic Resistances in a‐IGZO Thin‐Film Transistors
Author(s) -
Jo Chunhyung,
Bae Hagyoul,
Jun Sungwoo,
Choi Hyunjun,
Hwang Seonwook,
Kim Dae Hwan,
Kim Dong Myong,
Ahn ByungDu,
Lee JeHun,
Song Junho
Publication year - 2013
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/j.2168-0159.2013.tb06409.x
Subject(s) - materials science , schottky barrier , stress (linguistics) , parasitic element , optoelectronics , instability , characterization (materials science) , thin film transistor , mechanism (biology) , transistor , condensed matter physics , nanotechnology , electrical engineering , physics , engineering , philosophy , layer (electronics) , diode , voltage , mechanics , quantum mechanics , linguistics
The dominant mechanism of the negative bias stress (NBS)‐induced instability is investigated not to be a change in the subgap DOS but a change in the parasitic resistance caused by the reduced Schottky barrier of the metal contacts. This was verified by the extracted source/drain resistance and TCAD simulation.