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P.21: High Input Impedance Active Pixel Sensing Circuit with Threshold Voltage Compensation Implemented by Dual‐Gate IGZO TFTs
Author(s) -
Chou LuSheng,
Chang ChiaHung,
Chen HuaMao,
Tai YaHsiang
Publication year - 2013
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/j.2168-0159.2013.tb06406.x
Subject(s) - reset (finance) , compensation (psychology) , threshold voltage , thin film transistor , electrical engineering , node (physics) , materials science , voltage , optoelectronics , dual (grammatical number) , electrical impedance , high impedance , gate driver , computer science , electronic engineering , transistor , engineering , physics , acoustics , nanotechnology , psychology , art , literature , layer (electronics) , financial economics , psychoanalysis , economics
The dual‐gate TFT is biased at a preset status and store the threshold voltage information on the second gate. The reset TFT connecting to the sensing node can be omitted, and the high input impedance can be achieved. With this sensing circuit, the minimal charge can be sensitively amplified.