Premium
P.19: Density‐of‐States Based Device‐Circuit Co‐Design Platform for Solution‐Processed Organic Integrated Circuits
Author(s) -
Jang Jaeman,
Kim Jaehyeong,
Lee Jaewook,
Jo Chunhyung,
Jun Sungwoo,
Kim Hyeongjung,
Choi Sunwoong,
Kim Dong Myong,
Lee Jiyoul,
Koo Bonwon,
Chung Jong Won,
Kim Dae Hwan
Publication year - 2013
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/j.2168-0159.2013.tb06404.x
Subject(s) - integrated circuit , electronic circuit , transistor , inverter , electronic engineering , transistor model , materials science , computer science , electrical engineering , optoelectronics , engineering , voltage
In this work, we propose the subgap density‐of‐states (DOS) based device‐circuit co‐design platform for solution‐processed organic integrated circuits. For the circuit simulation, analytical I‐V and C‐V model were established from experimentally extracted DOS parameters, incorporated into HSPICE via Verilog‐A, and verified by comparing the simulation result with the measured characteristics of inverter integrated with solution‐processed polymer‐based organic thin‐film‐transistors. Furthermore, as the case study, it was shown by using our well‐calibrated simulation platform that the pass‐transistor type logic was potentially promising in low‐power and high‐speed solution processed organic integrated circuits.