Premium
P.15: Influence of Photo‐Thermal Pre‐treatment on Electrical Characteristics and Reliability of Zn‐Sn‐O Thin‐Film Transistors
Author(s) -
Chen YuChun,
Chang TingChang,
Li HungWei,
Hsieh TienYu,
Chung WanFang
Publication year - 2013
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/j.2168-0159.2013.tb06400.x
Subject(s) - passivation , materials science , thin film transistor , reliability (semiconductor) , thin film , thermal treatment , amorphous solid , transistor , thermal , optoelectronics , thermal stability , composite material , electrical engineering , nanotechnology , chemical engineering , chemistry , layer (electronics) , crystallography , voltage , power (physics) , physics , engineering , quantum mechanics , meteorology
This study presents the influence of photo‐thermal pre‐treatment on the electrical characteristic and bias‐induced instability of amorphous Zn‐Sn‐O thin film transistors. Even in the vacuum ambient, the passivation‐free device with photo‐thermal pre‐treatment shows more stability after stress than that without pre‐treatment. This indicates pre‐treatment should be conducted before passivation process.