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P.10: WITHDRAWN: P.11: Recognition of Existence of n‐type IGZO Layer in CAAC‐IGZO Film under Source and Drain Electrode Made of Tungsten
Author(s) -
Tokumaru Ryo,
Tsubuku Masashi,
Yamane Yasumasa,
Inoue Takayuki,
Tanaka Tetsuhiro,
Matsubayashi Daisuke,
Suzawa Hideomi,
Yamazaki Shunpei,
Nakazawa Yasutaka,
Jintyou Masami,
Matsukizono Hiroshi,
Oda Akihiro,
Mori Shigeyasu,
Matsuo Takuya
Publication year - 2013
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/j.2168-0159.2013.tb06396.x
Subject(s) - electrode , layer (electronics) , tungsten , materials science , sheet resistance , optoelectronics , thin film transistor , chemistry , nanotechnology , metallurgy
In a C‐axis aligned crystal (CAAC) IGZO TFT, contact between a CAAC‐IGZO film and source and drain electrode was good. In this study, we recognized the existence of n‐type IGZO layer serving as contact layer by a novel experimental method where a depth profile of the sheet resistance.