Premium
P.8: Trap States in Amorphous In‐Sn‐Zn‐O Thin‐Film Transistors Analyzed Using Dependence on Channel Thickness
Author(s) -
Matsuda Tokiyoshi,
Kimura Mutsumi,
Jiang Jingxin,
Wang Dapeng,
Furuta Mamoru,
Kasami Masashi,
Tomai Shigekazu,
Yano Koki
Publication year - 2013
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/j.2168-0159.2013.tb06394.x
Subject(s) - trap (plumbing) , thin film transistor , materials science , channel (broadcasting) , amorphous solid , extraction (chemistry) , front (military) , optoelectronics , atomic physics , analytical chemistry (journal) , layer (electronics) , electrical engineering , nanotechnology , chemistry , crystallography , physics , engineering , chromatography , meteorology
Trap states in α‐ITZO TFTs are analyzed using the dependences of the trap densities on the channel thickness. Utilizing extraction methods of trap densities in the film, at the front and back interfaces it is suggested that the trap states are not distributed in the film but localized at the interface