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P.5: High Uniformity Solid Phase Crystallized Bridged‐Grain Polycrystalline Silicon Thin Film Transistors
Author(s) -
Zhou Wei,
Chen Rongsheng,
Zhao Shuyun,
Zhang Meng,
Wong Man,
Kwok Hoi Sing
Publication year - 2013
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/j.2168-0159.2013.tb06391.x
Subject(s) - materials science , thin film transistor , optoelectronics , polycrystalline silicon , threshold voltage , transistor , grain size , amoled , phase (matter) , crystallite , subthreshold swing , voltage , nanotechnology , electrical engineering , composite material , metallurgy , active matrix , chemistry , engineering , organic chemistry , layer (electronics)
Solid phase crystallized poly‐Si TFT with Al 2 O 3 gate dielectric and bridged grain structure is demonstrated. The results show dramatically improved threshold voltage, subthreshold swing and on‐off ratio with very high uniformity. The proposed device is promising for application in AMOLED pixel circuits with simple design and low cost.