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67.1: Distinguished Student Paper : 40 um‐pitch IGZO TFT Gate Driver for High‐resolution Rollable AMOLED
Author(s) -
Geng Di,
Kim Byung Soon,
Mativenga Mallory,
Seok Man Ju,
Kang Dong Han,
Jang Jin
Publication year - 2013
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/j.2168-0159.2013.tb06373.x
Subject(s) - thin film transistor , shift register , materials science , amoled , optoelectronics , transistor , substrate (aquarium) , electrical engineering , active matrix , voltage , electronic circuit , engineering , nanotechnology , oceanography , layer (electronics) , geology
We report the design and fabrication of an amorphous‐indium‐gallium‐zinc‐oxide (a‐IGZO) thin‐film transistor (TFT)‐based high‐speed and ultra‐narrow shift register on a plastic substrate. The shift register consisting 5 TFTs and 1 capacitor is small in physical size which is only 40 μm in width (pitch). At the supply voltage (VDD) of 15 V, the clock frequency of the shift register approaches 166.7 kHz, corresponding to a pulse width of 3 μs. The shift register could be operated under mechanical bending radius of 2mm, making it applicable to flexible high resolution active‐matrix displays.