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62.4: High‐Performance Low‐Temperature Polycrystalline‐Silicon Thin Film Transistors with Submicron‐Dot‐Array Doped Active Channel
Author(s) -
Zhang Meng,
Zhou Wei,
Chen Rongsheng,
Chen Shuming,
Wong Man,
Kwok HoiSing
Publication year - 2013
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/j.2168-0159.2013.tb06357.x
Subject(s) - polycrystalline silicon , thin film transistor , materials science , optoelectronics , doping , fabrication , silicon , transistor , channel (broadcasting) , crystallite , nanotechnology , electrical engineering , layer (electronics) , voltage , engineering , metallurgy , medicine , alternative medicine , pathology
Abstract A novel method named as submicron‐dot‐array (SDA) doping is developed for the fabrication of low‐temperature polycrystalline‐silicon thin film transistors (TFTs). All electrical parameters are improved by employing SDA structure. It is worth mentioning that the mobility of fabricated device is 4 times of conventional TFTs. The proposed SDA method has great potential for system‐on‐panel applications.